logo

Y27US08121M Datasheet, Hynix Semiconductor

Y27US08121M hy27us08121m equivalent, hy27us08121m.

Y27US08121M

datasheet Download (Size : 796.67KB)

Y27US08121M Datasheet
1.0 · rating-1
Y27US08121M

datasheet Download (Size : 796.67KB)

Y27US08121M Datasheet
1.0 · rating-1

Features and benefits

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or .

Application

FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.D.

Description

of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface Using CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics (3V Product) 0.5 tCRY Before.

Image gallery

Y27US08121M Page 1 Y27US08121M Page 2 Y27US08121M Page 3

TAGS

Y27US08121M
HY27US08121M
Hynix Semiconductor

Manufacturer


Hynix Semiconductor

Related datasheet

Y2002KC250

Y200CKC250

Y2010DN

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts